Parametric results for: DMN25-1 under Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 3

6 hits Apply

DRAIN 4

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

6 hits Apply

DS Breakdown Voltage-Min (2)

20 V 3 25 V 1

Min (V) - Max (V)

6 hits Apply

Drain Current-Max (ID) (3)

240 mA 1 600 mA 1 810 mA 2

Min (A) - Max (A)

6 hits Apply

Drain-source On Resistance-Max (3)

400 mΩ 2 450 mΩ 1 4 Ω 1

Min (Ω) - Max (Ω)

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

6 hits Apply

R-PBCC-N3 2 R-PSSO-N2 2

6 hits Apply

e4 6

6 hits Apply

Manufacturer (1)

Diodes Incorporated 6

6 hits Apply

1 6

6 hits Apply

Number of Elements (1)

1 4

6 hits Apply

Number of Terminals (2)

2 2 3 2

6 hits Apply

ENHANCEMENT MODE 4

6 hits Apply

150.0 °C 2

6 hits Apply

PLASTIC/EPOXY 4

6 hits Apply

RECTANGULAR 4

6 hits Apply

CHIP CARRIER 2 SMALL OUTLINE 2

6 hits Apply

Active 4 Not Recommended 2

6 hits Apply

Yes 4

6 hits Apply

260 6

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

6 hits Apply

950 mW 2

6 hits Apply

Surface Mount (1)

YES 4

6 hits Apply