Parametric results for: DTA114E-D under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BIAS RESISTANCE RATIO IS 1 1

2 hits Apply

Collector Current-Max (IC) (1)

100 mA 1

2 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 1

2 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR 1

2 hits Apply

DC Current Gain-Min (hFE) (1)

30.0 1

2 hits Apply

R-PDSO-G6 1

2 hits Apply

Manufacturer (1)

Galaxy Microelectronics 2

2 hits Apply

Number of Elements (1)

2 1

2 hits Apply

Number of Terminals (1)

6 1

2 hits Apply

150.0 °C 1

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

SMALL OUTLINE 1

2 hits Apply

Active 2

2 hits Apply

Polarity/Channel Type (1)

PNP 1

2 hits Apply

150 mW 1

2 hits Apply

150 mW 1

2 hits Apply

Surface Mount (1)

YES 1

2 hits Apply

Transition Frequency-Nom (fT) (1)

250 MHz 1

2 hits Apply