Parametric results for: ECH8601 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 5 SINGLE WITH BUILT-IN DIODE 1

10 hits Apply

DS Breakdown Voltage-Min (2)

20 V 3 24 V 3

Min (V) - Max (V)

10 hits Apply

Drain Current-Max (ID) (3)

6.5 A 3 7 A 1 8 A 5

Min (A) - Max (A)

10 hits Apply

Drain-source On Resistance-Max (1)

30 mΩ 6

10 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

10 hits Apply

R-PDSO-F8 6

10 hits Apply

e6 2

10 hits Apply

Manufacturer (3)

onsemi 4 SANYO Electric Co Ltd 3 SANYO Semiconductor Co Ltd 3

10 hits Apply

1 2

10 hits Apply

Number of Elements (2)

1 1 2 5

Min - Max

10 hits Apply

Number of Terminals (1)

8 6

10 hits Apply

ENHANCEMENT MODE 9

10 hits Apply

150.0 °C 6

10 hits Apply

PLASTIC/EPOXY 6

10 hits Apply

RECTANGULAR 6

10 hits Apply

SMALL OUTLINE 6

10 hits Apply

Active 1 Obsolete 6 Transferred 3

10 hits Apply

Yes 1

10 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 9

10 hits Apply

1.5 W 3 1.6 W 3

Min (W) - Max (W)

10 hits Apply

Surface Mount (1)

YES 9

10 hits Apply