Parametric results for: ECH8602 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (3)

COMMON DRAIN, 2 ELEMENTS 1 COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE 1 COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 2

7 hits Apply

DS Breakdown Voltage-Min (1)

30 V 4

7 hits Apply

Drain Current-Max (ID) (2)

5 A 2 6 A 4

Min (A) - Max (A)

7 hits Apply

Drain-source On Resistance-Max (1)

31 mΩ 4

7 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

7 hits Apply

R-PDSO-F8 4

7 hits Apply

e6 1

7 hits Apply

Manufacturer (3)

onsemi 2 SANYO Electric Co Ltd 3 SANYO Semiconductor Co Ltd 2

7 hits Apply

1 1

7 hits Apply

Number of Elements (1)

2 4

7 hits Apply

Number of Terminals (1)

8 4

7 hits Apply

ENHANCEMENT MODE 5

7 hits Apply

150.0 °C 5

7 hits Apply

PLASTIC/EPOXY 4

7 hits Apply

RECTANGULAR 4

7 hits Apply

SMALL OUTLINE 4

7 hits Apply

End Of Life 1 Obsolete 4 Transferred 2

7 hits Apply

Yes 1

7 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

7 hits Apply

1.4 W 1 1.5 W 4

Min (W) - Max (W)

7 hits Apply

Surface Mount (1)

YES 6

7 hits Apply