Parametric results for: EMG8T2R under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BIAS RESISTOR RATIO IS 10 1

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Collector Current-Max (IC) (1)

100 mA 1

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Collector-Emitter Voltage-Max (1)

50 V 1

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Configuration (1)

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR 1

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DC Current Gain-Min (hFE) (1)

80.0 1

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R-PDSO-F5 1

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e2 1

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Manufacturer (1)

ROHM Semiconductor 1

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1 1

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Number of Elements (1)

2 1

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Number of Terminals (1)

5 1

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150.0 °C 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Active 1

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Yes 1

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260 1

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Polarity/Channel Type (1)

NPN 1

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150 mW 1

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Surface Mount (1)

YES 1

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Transition Frequency-Nom (fT) (1)

250 MHz 1

1 hit Apply