Parametric results for: EPC-22 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

6 hits Apply

DS Breakdown Voltage-Min (2)

100 V 2 200 V 1

Min (V) - Max (V)

6 hits Apply

Drain Current-Max (ID) (3)

14 A 1 18 A 1 60 A 1

Min (A) - Max (A)

6 hits Apply

Drain-source On Resistance-Max (3)

3.2 mΩ 1 13.5 mΩ 1 22 mΩ 1

Min (Ω) - Max (Ω)

6 hits Apply

HIGH ELECTRON MOBILITY 3

6 hits Apply

0.7 pF 1 3 pF 1 4.3 pF 1

Min (pF) - Max (pF)

6 hits Apply

R-XUUC-N6 1 R-XUUC-N8 1 R-XUUC-X6 1

6 hits Apply

Manufacturer (1)

Efficient Power Conversion 6

6 hits Apply

1 3

6 hits Apply

Number of Elements (1)

1 3

6 hits Apply

Number of Terminals (2)

6 2 8 1

6 hits Apply

ENHANCEMENT MODE 3

6 hits Apply

150.0 °C 3

6 hits Apply

-40.0 °C 3

6 hits Apply

UNSPECIFIED 3

6 hits Apply

RECTANGULAR 3

6 hits Apply

UNCASED CHIP 3

6 hits Apply

Contact Manufacturer 6

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

6 hits Apply

Surface Mount (1)

YES 3

6 hits Apply