Parametric results for: ESM2012DV under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration Fall Time-Max (tf) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

ISOLATED 1

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Collector Current-Max (IC) (1)

120 A 1

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Collector-Emitter Voltage-Max (1)

125 V 1

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Configuration (1)

DARLINGTON WITH BUILT-IN DIODE 1

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300 ns 1

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R-XUFM-X4 1

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Manufacturer (1)

STMicroelectronics 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

4 1

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150.0 °C 1

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UNSPECIFIED 1

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RECTANGULAR 1

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FLANGE MOUNT 1

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Obsolete 1

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Polarity/Channel Type (1)

NPN 1

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175 W 1

1 hit Apply

175 W 1

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Surface Mount (1)

NO 1

1 hit Apply