Parametric results for: FA1A4M-T1B under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

BUILT IN BIAS RESISTANCE RATIO 1.11 1

2 hits Apply

Collector Current-Max (IC) (1)

100 mA 2

2 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 2

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN RESISTOR 2

2 hits Apply

DC Current Gain-Min (hFE) (1)

80.0 2

2 hits Apply

R-PDSO-G3 2

2 hits Apply

Manufacturer (2)

NEC Electronics Group 1 Renesas Electronics Corporation 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 2

2 hits Apply

150.0 °C 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Obsolete 2

2 hits Apply

Yes 1

2 hits Apply

Polarity/Channel Type (1)

NPN 2

2 hits Apply

200 mW 1

2 hits Apply

200 mW 1

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply