Parametric results for: FA38SA50LC under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 4

5 hits Apply

580.0 mJ 4

5 hits Apply

ISOLATED 4

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

5 hits Apply

DS Breakdown Voltage-Min (1)

500 V 4

5 hits Apply

Drain Current-Max (ID) (1)

38 A 4

5 hits Apply

Drain-source On Resistance-Max (1)

130 mΩ 4

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

5 hits Apply

R-PUFM-X4 4

5 hits Apply

e0 1

5 hits Apply

Manufacturer (2)

International Rectifier 3 Vishay Intertechnologies 2

5 hits Apply

Number of Elements (1)

1 4

5 hits Apply

Number of Terminals (1)

4 4

5 hits Apply

ENHANCEMENT MODE 4

5 hits Apply

150.0 °C 3

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4

5 hits Apply

FLANGE MOUNT 4

5 hits Apply

Obsolete 3 Transferred 2

5 hits Apply

No 1 Yes 1

5 hits Apply

NOT SPECIFIED 2

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

5 hits Apply

500 W 2

5 hits Apply

500 W 2

5 hits Apply

Surface Mount (1)

NO 4

5 hits Apply