Parametric results for: FCMT199N60 under Power Field-Effect Transistors

All Filters Configuration Drain Current-Max (ID) FET Technology Manufacturer Moisture Sensitivity Level Number of Elements Operating Temperature-Max Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 2

2 hits Apply

Drain Current-Max (ID) (1)

20.2 A 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 1 onsemi 1

2 hits Apply

1 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

150.0 °C 2

2 hits Apply

Active 1 Transferred 1

2 hits Apply

Yes 2

2 hits Apply

260 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

208 W 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply