Parametric results for: FDB8860.. under Power Field-Effect Transistors

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Manufacturer Part Number: fdb8860
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FDB8860
Fairchild Semiconductor Corporation
$1.4840 Yes Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 30 V 1 31 A 2.7 mΩ 947 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 306 W SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE FAIRCHILD SEMICONDUCTOR CORP D2PAK ROHS COMPLIANT PACKAGE-3 2 2LD,TO263, SURFACE MOUNT not_compliant EAR99 8541.29.00.95
FDB8860-F085
onsemi
$1.9512 Yes Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 30 V 1 31 A 2.7 mΩ 947 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 254 W SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C 245 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING SINGLE ONSEMI TO-263 2L (D2PAK) ROHS COMPLIANT PACKAGE-3 418AJ not_compliant EAR99 onsemi
FDB8860
onsemi
$2.1077 Yes End Of Life N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 30 V 1 31 A 2.7 mΩ 947 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 306 W SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C 245 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE ONSEMI ROHS COMPLIANT PACKAGE-3 418AJ not_compliant EAR99 onsemi
FDB8860_F085
Fairchild Semiconductor Corporation
Check for Price Yes Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 30 V 1 31 A 2.7 mΩ 947 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 254 W SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE FAIRCHILD SEMICONDUCTOR CORP D2PAK ROHS COMPLIANT PACKAGE-3 2 2LD,TO263, SURFACE MOUNT not_compliant EAR99
FDB8860_NB82103
Fairchild Semiconductor Corporation
Check for Price Obsolete N-CHANNEL YES SINGLE 1 31 A METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 254 W 175 °C FAIRCHILD SEMICONDUCTOR CORP , unknown EAR99
FDB8860_F085
onsemi
Check for Price Yes Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 30 V 1 31 A 2.7 mΩ 947 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 254 W SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C 245 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING SINGLE ON SEMICONDUCTOR SMALL OUTLINE, R-PSSO-G2 TO263A02 compliant EAR99 onsemi
FDB8860
Rochester Electronics LLC
Check for Price Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 30 V 1 31 A 2.7 mΩ 947 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-263AB R-PSSO-G2 e3 COMMERCIAL 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE ROCHESTER ELECTRONICS LLC D2PAK ROHS COMPLIANT PACKAGE-3 3 unknown