Parametric results for: FDC6322C under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6

7 hits Apply

DS Breakdown Voltage-Min (1)

25 V 6

7 hits Apply

Drain Current-Max (ID) (1)

220 mA 6

7 hits Apply

Drain-source On Resistance-Max (2)

4 Ω 3 5 Ω 3

Min (Ω) - Max (Ω)

7 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

7 hits Apply

R-PDSO-G6 6

7 hits Apply

e3 2

7 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 6 Rochester Electronics LLC 1

7 hits Apply

1 2

7 hits Apply

Number of Elements (1)

2 6

7 hits Apply

Number of Terminals (1)

6 6

7 hits Apply

ENHANCEMENT MODE 6

7 hits Apply

150.0 °C 6

7 hits Apply

-55.0 °C 2

7 hits Apply

PLASTIC/EPOXY 6

7 hits Apply

RECTANGULAR 6

7 hits Apply

SMALL OUTLINE 6

7 hits Apply

Obsolete 7

7 hits Apply

Yes 1

7 hits Apply

Polarity/Channel Type (1)

N-CHANNEL AND P-CHANNEL 6

7 hits Apply

900 mW 2

7 hits Apply

Surface Mount (1)

YES 6

7 hits Apply