Parametric results for: FDD8444-F085 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

535.0 mJ 3

4 hits Apply

DRAIN 3

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

40 V 3

4 hits Apply

Drain-source On Resistance-Max (1)

5.2 mΩ 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

TO-252AA 3

4 hits Apply

R-PSSO-G2 3

4 hits Apply

e3 4

4 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 1 onsemi 3

4 hits Apply

1 3

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

2 3

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

175.0 °C 3

4 hits Apply

-55.0 °C 3

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

SMALL OUTLINE 3

4 hits Apply

Obsolete 3 Transferred 1

4 hits Apply

Yes 3

4 hits Apply

260 3 NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

4 hits Apply

153 W 3

4 hits Apply

Surface Mount (1)

YES 3

4 hits Apply