Parametric results for: FDD8453LZ-F085 under Power Field-Effect Transistors

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Manufacturer Part Number: fdd8453lzf085
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FDD8453LZ-F085
onsemi
$0.7180 Yes End Of Life N-CHANNEL YES Single 75 A METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 65 W 150 °C ONSEMI TO-252 3L (DPAK) DPAK-3/2 369AS not_compliant onsemi
FDD8453LZ-F085
Fairchild Semiconductor Corporation
Check for Price Yes Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 40 V 1 6.5 mΩ 88 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 65 W SWITCHING SILICON TO-252AA R-PSSO-G2 e3 AEC-Q101 1 150 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE FAIRCHILD SEMICONDUCTOR CORP TO-252 SMALL OUTLINE, R-PSSO-G2 unknown 3 EAR99 8541.29.00.95
FDD8453LZ_F085
Fairchild Semiconductor Corporation
Check for Price Yes Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 40 V 1 6.5 mΩ 88 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 65 W SWITCHING SILICON TO-252AA R-PSSO-G2 e3 AEC-Q101 1 150 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE FAIRCHILD SEMICONDUCTOR CORP DPAK ROHS COMPLIANT, DPAK-3 TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB not_compliant 3 EAR99 8541.29.00.95
FDD8453LZ_F085
onsemi
Check for Price Yes Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 40 V 1 6.5 mΩ 88 mJ 260 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 118 W SWITCHING SILICON 80 ns 34 ns TO-252AA R-PSSO-G2 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE ON SEMICONDUCTOR SMALL OUTLINE, R-PSSO-G2 TO252A03 not_compliant onsemi EAR99