Parametric results for: FDG315N under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 5

6 hits Apply

DS Breakdown Voltage-Min (1)

30 V 5

6 hits Apply

Drain Current-Max (ID) (1)

2 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

120 mΩ 5

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

R-PDSO-G6 5

6 hits Apply

e3 4

6 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 4 onsemi 1 Rochester Electronics LLC 1

6 hits Apply

1 4

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

6 5

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 5

6 hits Apply

PLASTIC/EPOXY 5

6 hits Apply

RECTANGULAR 5

6 hits Apply

SMALL OUTLINE 5

6 hits Apply

Active 1 End Of Life 1 Obsolete 3 Transferred 1

6 hits Apply

Yes 3

6 hits Apply

260 3

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

750 mW 4

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply