Parametric results for: FDG6304P-NL under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 1

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Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

25 V 1

1 hit Apply

Drain Current-Max (ID) (1)

410 mA 1

1 hit Apply

Drain-source On Resistance-Max (1)

1.1 Ω 1

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METAL-OXIDE SEMICONDUCTOR 1

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R-PDSO-G6 1

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e3 1

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Manufacturer (1)

Fairchild Semiconductor Corporation 1

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1 1

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Number of Elements (1)

2 1

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Number of Terminals (1)

6 1

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ENHANCEMENT MODE 1

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150.0 °C 1

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-55.0 °C 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Obsolete 1

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Polarity/Channel Type (1)

P-CHANNEL 1

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300 mW 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply