Parametric results for: FDG6335N under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

20 V 5

5 hits Apply

Drain Current-Max (ID) (1)

700 mA 5

5 hits Apply

Drain-source On Resistance-Max (1)

300 mΩ 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-PDSO-G6 5

5 hits Apply

e3 4

5 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 3 onsemi 1 Rochester Electronics LLC 1

5 hits Apply

1 4

5 hits Apply

Number of Elements (1)

2 5

5 hits Apply

Number of Terminals (1)

6 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 4

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

SMALL OUTLINE 5

5 hits Apply

Active 2 Obsolete 2 Transferred 1

5 hits Apply

Yes 3

5 hits Apply

260 2 NOT SPECIFIED 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

300 mW 3

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply