Parametric results for: FDI8441 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

947.0 mJ 2

3 hits Apply

DRAIN 1

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

40 V 2

3 hits Apply

Drain Current-Max (ID) (2)

26 A 1 80 A 1

Min (A) - Max (A)

3 hits Apply

Drain-source On Resistance-Max (2)

2.7 mΩ 1 4.7 mΩ 1

Min (Ω) - Max (Ω)

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

3 hits Apply

TO-262AB 2

3 hits Apply

R-PSIP-T3 2

3 hits Apply

e3 2

3 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 2 onsemi 1

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

3 2

3 hits Apply

ENHANCEMENT MODE 2

3 hits Apply

175.0 °C 2

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

IN-LINE 2

3 hits Apply

Obsolete 3

3 hits Apply

Yes 3

3 hits Apply

NOT SPECIFIED 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

3 hits Apply

300 W 2

3 hits Apply

Surface Mount (1)

NO 2

3 hits Apply