Parametric results for: FDM2509NZ under Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ESD PROTECTED 3

3 hits Apply

DRAIN 3

3 hits Apply

Configuration (1)

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

20 V 3

3 hits Apply

Drain Current-Max (ID) (1)

8.7 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

18 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-PDSO-N6 3

3 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 2 Rochester Electronics LLC 1

3 hits Apply

1 2

3 hits Apply

Number of Elements (1)

2 3

3 hits Apply

Number of Terminals (1)

6 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 1

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Active 1 Obsolete 2

3 hits Apply

Yes 1

3 hits Apply

NOT SPECIFIED 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

2.2 W 1

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply