Parametric results for: FDMC86260 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE ENERGY RATED 1

4 hits Apply

121.0 mJ 3

4 hits Apply

DRAIN 3

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

150 V 3

4 hits Apply

Drain Current-Max (ID) (2)

5.4 A 2 25 A 1

Min (A) - Max (A)

4 hits Apply

Drain-source On Resistance-Max (1)

34 mΩ 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

10 pF 1

4 hits Apply

MO-240BA 3

4 hits Apply

S-PDSO-N5 3

4 hits Apply

e3 3

4 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 2 onsemi 2

4 hits Apply

1 4

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

5 3

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

150.0 °C 2 175.0 °C 1

Min (°C) - Max (°C)

4 hits Apply

-55.0 °C 1

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

SQUARE 3

4 hits Apply

SMALL OUTLINE 3

4 hits Apply

Active 2 Transferred 2

4 hits Apply

Yes 4

4 hits Apply

260 3

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

4 hits Apply

2.8 W 1

4 hits Apply

54 W 2 65 W 1

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

YES 3

4 hits Apply