Parametric results for: FDN5632N-F085 under Power Field-Effect Transistors

All Filters Configuration Drain Current-Max (ID) FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 3

3 hits Apply

Drain Current-Max (ID) (1)

1.7 A 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-PDSO-G3 3

3 hits Apply

e3 3

3 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 1 onsemi 2

3 hits Apply

1 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

150.0 °C 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Active 2 Transferred 1

3 hits Apply

Yes 2

3 hits Apply

260 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

1.1 W 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply