Parametric results for: FDR836P under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

20 V 4

4 hits Apply

Drain Current-Max (ID) (1)

6.1 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

30 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-PDSO-G8 4

4 hits Apply

e0 1

4 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 3 Rochester Electronics LLC 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

8 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 3

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Active 1 Obsolete 3

4 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 4

4 hits Apply

1.8 W 1

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply