Parametric results for: FDR858P under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 3

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

30 V 4

4 hits Apply

Drain Current-Max (ID) (1)

8 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

19 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-PDSO-G8 4

4 hits Apply

e3 2

4 hits Apply

Manufacturer (1)

Fairchild Semiconductor Corporation 4

4 hits Apply

1 2

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

8 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Obsolete 4

4 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 4

4 hits Apply

1.8 W 2

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply