Parametric results for: FGP10N60UNDF under IGBTs

All Filters Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration Fall Time-Max (tf) Gate-Emitter Thr Voltage-Max Gate-Emitter Voltage-Max JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Collector Current-Max (IC) (1)

20 A 2

2 hits Apply

Collector-Emitter Voltage-Max (1)

600 V 2

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

2 hits Apply

24.8 ns 2

2 hits Apply

Gate-Emitter Thr Voltage-Max (1)

8.5 V 2

2 hits Apply

20 V 2

2 hits Apply

TO-220AB 2

2 hits Apply

R-PSFM-T3 2

2 hits Apply

e3 2

2 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 1 onsemi 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 2

2 hits Apply

150.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

End Of Life 1 Transferred 1

2 hits Apply

Yes 2

2 hits Apply

NOT SPECIFIED 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

139 W 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply