Parametric results for: FHX35LG/002-E1 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

HIGH RELIABILITY 1 LOW NOISE 2

4 hits Apply

SOURCE 1

4 hits Apply

Configuration (1)

SINGLE 3

4 hits Apply

DS Breakdown Voltage-Min (2)

4 V 1 6 V 2

Min (V) - Max (V)

4 hits Apply

HIGH ELECTRON MOBILITY 3

4 hits Apply

O-CRDB-F4 2 X-CXDB-F4 1

4 hits Apply

Manufacturer (4)

FUJITSU Limited 1 FUJITSU Semiconductor Limited 1 SUMITOMO ELECTRIC Device Innovations Inc 1 SUMITOMO ELECTRIC Industries Ltd 1

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

4 3

4 hits Apply

DEPLETION MODE 3

4 hits Apply

175.0 °C 2

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

4 hits Apply

ROUND 2 UNSPECIFIED 1

4 hits Apply

DISK BUTTON 3

4 hits Apply

Contact Manufacturer 1 Obsolete 3

4 hits Apply

NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

290 mW 2

4 hits Apply

Surface Mount (1)

YES 3

4 hits Apply