Parametric results for: FHX76LP under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Gain-Min (Gp) Surface Mount

HIGH RELIABILITY 3 LOW NOISE, HIGH RELIABILITY 1

4 hits Apply

SOURCE 4

4 hits Apply

Configuration (1)

SINGLE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

3.5 V 4

4 hits Apply

HIGH ELECTRON MOBILITY 4

4 hits Apply

Highest Frequency Band (2)

KU BAND 1 X BAND 3

4 hits Apply

O-CRDB-F4 4

4 hits Apply

Manufacturer (4)

FUJITSU Limited 1 FUJITSU Semiconductor Limited 1 SUMITOMO ELECTRIC Device Innovations Inc 1 SUMITOMO ELECTRIC Industries Ltd 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

4 4

4 hits Apply

DEPLETION MODE 4

4 hits Apply

150.0 °C 1

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 4

4 hits Apply

ROUND 4

4 hits Apply

DISK BUTTON 4

4 hits Apply

Contact Manufacturer 1 Obsolete 2 Transferred 1

4 hits Apply

Yes 3

4 hits Apply

NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

180 mW 1

4 hits Apply

Power Gain-Min (Gp) (1)

12.0 dB 4

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply