Parametric results for: FMP10N60E under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount

416.0 mJ 1

1 hit Apply

ISOLATED 1

1 hit Apply

Configuration (1)

SINGLE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

600 V 1

1 hit Apply

Drain Current-Max (ID) (1)

10 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

790 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

TO-220AB 1

1 hit Apply

R-PSFM-T3 1

1 hit Apply

Manufacturer (1)

Fuji Electric Co Ltd 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

3 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

FLANGE MOUNT 1

1 hit Apply

Not Recommended 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply