Parametric results for: FMV12N50E under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOW NOISE 2

2 hits Apply

400.0 mJ 1 460.8 mJ 1

Min (mJ) - Max (mJ)

2 hits Apply

ISOLATED 2

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

500 V 2

2 hits Apply

Drain Current-Max (ID) (1)

12 A 2

2 hits Apply

Drain-source On Resistance-Max (2)

500 mΩ 1 520 mΩ 1

Min (Ω) - Max (Ω)

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

TO-220AB 2

2 hits Apply

R-PSFM-T3 2

2 hits Apply

Manufacturer (1)

Fuji Electric Co Ltd 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Not Recommended 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

60 W 1 65 W 1

Min (W) - Max (W)

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply