Parametric results for: FP1A4M-T2B under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

BUILT-IN BIAS RESISTOR RATIO IS 1 1

3 hits Apply

Collector Current-Max (IC) (1)

700 mA 3

3 hits Apply

Collector-Emitter Voltage-Max (1)

25 V 1

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN RESISTOR 1

3 hits Apply

DC Current Gain-Min (hFE) (2)

50.0 2 100.0 1

Min - Max

3 hits Apply

R-PDSO-G3 1

3 hits Apply

Manufacturer (2)

NEC Electronics America Inc 1 Renesas Electronics Corporation 2

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 1

3 hits Apply

150.0 °C 1

3 hits Apply

PLASTIC/EPOXY 1

3 hits Apply

RECTANGULAR 1

3 hits Apply

SMALL OUTLINE 1

3 hits Apply

Active 2 Obsolete 1

3 hits Apply

Polarity/Channel Type (1)

PNP 3

3 hits Apply

200 mW 2

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply