Parametric results for: FPD750DFN under RF Power Field-Effect Transistors

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Manufacturer Part Number: fpd750dfn
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FPD750DFN
RF Micro Devices Inc
Check for Price Yes Obsolete N-CHANNEL YES SINGLE 6 8 V L BAND 1 HIGH ELECTRON MOBILITY DEPLETION MODE 1.5 W AMPLIFIER GALLIUM ARSENIDE S-PDSO-N6 Not Qualified 175 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY SQUARE SMALL OUTLINE NO LEAD DUAL RF MICRO DEVICES INC DFN SMALL OUTLINE, S-PDSO-N6 6 unknown EAR99 8541.29.00.75
FPD750DFN
Filtronic Compound Semiconductor
Check for Price Transferred FILTRONIC COMPOUND SEMICONDUCTOR , unknown EAR99
FPD750DFNSQ
RF Micro Devices Inc
Check for Price Yes Yes Obsolete N-CHANNEL YES SINGLE 6 8 V L BAND 1 HIGH ELECTRON MOBILITY DEPLETION MODE 1.5 W AMPLIFIER GALLIUM ARSENIDE S-PDSO-N6 Not Qualified 1 175 °C PLASTIC/EPOXY SQUARE SMALL OUTLINE NO LEAD DUAL RF MICRO DEVICES INC DFN SMALL OUTLINE, S-PDSO-N6 6 compliant EAR99 8541.29.00.75
FPD750DFNSB
RF Micro Devices Inc
Check for Price Yes Yes Obsolete N-CHANNEL YES SINGLE 6 8 V L BAND 1 HIGH ELECTRON MOBILITY DEPLETION MODE 1.5 W AMPLIFIER GALLIUM ARSENIDE S-PDSO-N6 Not Qualified 1 175 °C PLASTIC/EPOXY SQUARE SMALL OUTLINE NO LEAD DUAL RF MICRO DEVICES INC DFN SMALL OUTLINE, S-PDSO-N6 6 compliant EAR99 8541.29.00.75
FPD750DFNSR
RF Micro Devices Inc
Check for Price Yes Yes Obsolete N-CHANNEL YES SINGLE 6 8 V L BAND 1 HIGH ELECTRON MOBILITY DEPLETION MODE 1.5 W AMPLIFIER GALLIUM ARSENIDE S-PDSO-N6 Not Qualified 1 175 °C PLASTIC/EPOXY SQUARE SMALL OUTLINE NO LEAD DUAL RF MICRO DEVICES INC DFN SMALL OUTLINE, S-PDSO-N6 6 compliant EAR99 8541.29.00.75