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FQAF16N25C
Rochester Electronics LLC
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Check for Price | Yes | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 11.4 A | 270 mΩ | 410 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 45.6 A | SWITCHING | SILICON | R-PSFM-T3 | e3 | COMMERCIAL | NOT APPLICABLE | NOT APPLICABLE | NOT APPLICABLE | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN | THROUGH-HOLE | SINGLE | ROCHESTER ELECTRONICS LLC | TO-3PF | TO-3PF, 3 PIN | 3 | unknown | |||||
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FQAF16N25
Fairchild Semiconductor Corporation
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 12.4 A | 230 mΩ | 560 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 85 W | 50 A | SWITCHING | SILICON | R-PSFM-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | TO-3PF | TO-3PF, 3 PIN | 3 | unknown | EAR99 | |||||||
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FQAF16N25C
Fairchild Semiconductor Corporation
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 11.4 A | 270 mΩ | 410 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 73 W | 45.6 A | SWITCHING | SILICON | R-PSFM-T3 | e3 | Not Qualified | 150 °C | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | TO-3PF | TO-3PF, 3 PIN | 3 | unknown | EAR99 | ||||||
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FQAF16N25
Rochester Electronics LLC
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Check for Price | Yes | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 12.4 A | 230 mΩ | 560 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 50 A | SWITCHING | SILICON | R-PSFM-T3 | COMMERCIAL | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | NOT SPECIFIED | THROUGH-HOLE | SINGLE | ROCHESTER ELECTRONICS LLC | TO-3PF | TO-3PF, 3 PIN | 3 | unknown |