Parametric results for: FQAF16N25 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

410.0 mJ 2 560.0 mJ 2

Min (mJ) - Max (mJ)

4 hits Apply

ISOLATED 2

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

250 V 4

4 hits Apply

Drain Current-Max (ID) (2)

11.4 A 2 12.4 A 2

Min (A) - Max (A)

4 hits Apply

Drain-source On Resistance-Max (2)

230 mΩ 2 270 mΩ 2

Min (Ω) - Max (Ω)

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-PSFM-T3 4

4 hits Apply

e3 3

4 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 2 Rochester Electronics LLC 2

4 hits Apply

NOT APPLICABLE 1 NOT SPECIFIED 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 2

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

Active 2 Obsolete 2

4 hits Apply

Yes 2

4 hits Apply

NOT APPLICABLE 1 NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

73 W 1 85 W 1

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply