Parametric results for: FQAF16N25 under Power Field-Effect Transistors

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Manufacturer Part Number: fqaf16n25
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FQAF16N25C
Rochester Electronics LLC
Check for Price Yes Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 250 V 1 11.4 A 270 mΩ 410 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 45.6 A SWITCHING SILICON R-PSFM-T3 e3 COMMERCIAL NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE ISOLATED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT MATTE TIN THROUGH-HOLE SINGLE ROCHESTER ELECTRONICS LLC TO-3PF TO-3PF, 3 PIN 3 unknown
FQAF16N25
Fairchild Semiconductor Corporation
Check for Price Yes Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 250 V 1 12.4 A 230 mΩ 560 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 85 W 50 A SWITCHING SILICON R-PSFM-T3 e3 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT MATTE TIN THROUGH-HOLE SINGLE FAIRCHILD SEMICONDUCTOR CORP TO-3PF TO-3PF, 3 PIN 3 unknown EAR99
FQAF16N25C
Fairchild Semiconductor Corporation
Check for Price Yes Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 250 V 1 11.4 A 270 mΩ 410 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 73 W 45.6 A SWITCHING SILICON R-PSFM-T3 e3 Not Qualified 150 °C ISOLATED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT MATTE TIN THROUGH-HOLE SINGLE FAIRCHILD SEMICONDUCTOR CORP TO-3PF TO-3PF, 3 PIN 3 unknown EAR99
FQAF16N25
Rochester Electronics LLC
Check for Price Yes Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 250 V 1 12.4 A 230 mΩ 560 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 50 A SWITCHING SILICON R-PSFM-T3 COMMERCIAL NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT NOT SPECIFIED THROUGH-HOLE SINGLE ROCHESTER ELECTRONICS LLC TO-3PF TO-3PF, 3 PIN 3 unknown