Parametric results for: FQB9N50 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

FAST SWITCHING 3

11 hits Apply

300.0 mJ 3 360.0 mJ 7

Min (mJ) - Max (mJ)

11 hits Apply

DRAIN 10

11 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 10

11 hits Apply

DS Breakdown Voltage-Min (1)

500 V 10

11 hits Apply

Drain Current-Max (ID) (1)

9 A 10

11 hits Apply

Drain-source On Resistance-Max (3)

730 mΩ 3 800 mΩ 4 850 mΩ 3

Min (Ω) - Max (Ω)

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 10

11 hits Apply

TO-263AB 6

11 hits Apply

R-PSSO-G2 10

11 hits Apply

e0 1 e3 4

11 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 7 onsemi 2 Rochester Electronics LLC 2

11 hits Apply

1 6

11 hits Apply

Number of Elements (1)

1 10

11 hits Apply

Number of Terminals (1)

2 10

11 hits Apply

ENHANCEMENT MODE 10

11 hits Apply

150.0 °C 8

11 hits Apply

PLASTIC/EPOXY 10

11 hits Apply

RECTANGULAR 10

11 hits Apply

SMALL OUTLINE 10

11 hits Apply

Active 3 End Of Life 1 Obsolete 5 Transferred 2

11 hits Apply

Yes 3

11 hits Apply

245 2 260 1

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 10

11 hits Apply

135 W 2 147 W 2 173 W 2

Min (W) - Max (W)

11 hits Apply

Surface Mount (1)

YES 10

11 hits Apply