Parametric results for: FQI12N20 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

210.0 mJ 4

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

200 V 4

4 hits Apply

Drain Current-Max (ID) (1)

11.6 A 4

4 hits Apply

Drain-source On Resistance-Max (2)

280 mΩ 2 320 mΩ 2

Min (Ω) - Max (Ω)

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-262AA 4

4 hits Apply

R-PSIP-T3 4

4 hits Apply

e0 4

4 hits Apply

Manufacturer (1)

Fairchild Semiconductor Corporation 4

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

IN-LINE 4

4 hits Apply

Obsolete 4

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

3.5 W 2 90 W 2

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply