Parametric results for: FQI12N60 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 1

6 hits Apply

790.0 mJ 3 870.0 mJ 3

Min (mJ) - Max (mJ)

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

600 V 6

6 hits Apply

Drain Current-Max (ID) (2)

10.5 A 3 12 A 3

Min (A) - Max (A)

6 hits Apply

Drain-source On Resistance-Max (2)

650 mΩ 3 700 mΩ 3

Min (Ω) - Max (Ω)

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

TO-262AA 3

6 hits Apply

R-PSIP-T3 6

6 hits Apply

e0 1 e3 2

6 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 4 Rochester Electronics LLC 2

6 hits Apply

NOT SPECIFIED 1

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

3 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 4

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

IN-LINE 6

6 hits Apply

Active 2 Obsolete 4

6 hits Apply

Yes 1

6 hits Apply

NOT SPECIFIED 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

180 W 2 225 W 1

Min (W) - Max (W)

6 hits Apply

Surface Mount (1)

NO 6

6 hits Apply