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FQI3N90TU
Rochester Electronics LLC
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Check for Price | Yes | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 900 V | 1 | 3.6 A | 4.25 Ω | 450 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 14.4 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e3 | COMMERCIAL | NOT APPLICABLE | NOT APPLICABLE | NOT APPLICABLE | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN | THROUGH-HOLE | SINGLE | ROCHESTER ELECTRONICS LLC | TO-262AA | I2PAK-3 | 3 | unknown | |||||
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FQI3N90TU
Fairchild Semiconductor Corporation
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 900 V | 1 | 3.6 A | 4.25 Ω | 450 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 130 W | 14.4 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | TO-262AA | I2PAK-3 | 3 | not_compliant | EAR99 | ||||||
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FQI3N90
Fairchild Semiconductor Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 900 V | 1 | 3.6 A | 4.25 Ω | 450 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 130 W | 14.4 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | TO-262 | IN-LINE, R-PSIP-T3 | 3 | unknown | EAR99 |