Parametric results for: FQI3N90 under Power Field-Effect Transistors

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Manufacturer Part Number: fqi3n90
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FQI3N90TU
Rochester Electronics LLC
Check for Price Yes Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 900 V 1 3.6 A 4.25 Ω 450 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 14.4 A SWITCHING SILICON TO-262AA R-PSIP-T3 e3 COMMERCIAL NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE PLASTIC/EPOXY RECTANGULAR IN-LINE MATTE TIN THROUGH-HOLE SINGLE ROCHESTER ELECTRONICS LLC TO-262AA I2PAK-3 3 unknown
FQI3N90TU
Fairchild Semiconductor Corporation
Check for Price Yes Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 900 V 1 3.6 A 4.25 Ω 450 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 130 W 14.4 A SWITCHING SILICON TO-262AA R-PSIP-T3 e3 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR IN-LINE MATTE TIN THROUGH-HOLE SINGLE FAIRCHILD SEMICONDUCTOR CORP TO-262AA I2PAK-3 3 not_compliant EAR99
FQI3N90
Fairchild Semiconductor Corporation
Check for Price No Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 900 V 1 3.6 A 4.25 Ω 450 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 130 W 14.4 A SWITCHING SILICON TO-262AA R-PSIP-T3 e0 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR IN-LINE TIN LEAD THROUGH-HOLE SINGLE FAIRCHILD SEMICONDUCTOR CORP TO-262 IN-LINE, R-PSIP-T3 3 unknown EAR99