Parametric results for: FQI4P25 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

280.0 mJ 2

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

250 V 2

2 hits Apply

Drain Current-Max (ID) (1)

4 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

2.1 Ω 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

TO-262AA 2

2 hits Apply

R-PSIP-T3 2

2 hits Apply

e0 2

2 hits Apply

Manufacturer (1)

Fairchild Semiconductor Corporation 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

IN-LINE 2

2 hits Apply

Obsolete 2

2 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 2

2 hits Apply

75 W 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply