Parametric results for: FQP16N25 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

410.0 mJ 1 560.0 mJ 3

Min (mJ) - Max (mJ)

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

250 V 4

4 hits Apply

Drain Current-Max (ID) (2)

15.6 A 1 16 A 3

Min (A) - Max (A)

4 hits Apply

Drain-source On Resistance-Max (2)

230 mΩ 3 270 mΩ 1

Min (Ω) - Max (Ω)

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-220AB 4

4 hits Apply

R-PSFM-T3 4

4 hits Apply

e3 3

4 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 3 onsemi 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

End Of Life 1 Obsolete 2 Transferred 1

4 hits Apply

Yes 3

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

139 W 1 142 W 2

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply