Parametric results for: FQP33N10 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

430.0 mJ 2 435.0 mJ 2

Min (mJ) - Max (mJ)

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

6 hits Apply

DS Breakdown Voltage-Min (1)

100 V 4

6 hits Apply

Drain Current-Max (ID) (1)

33 A 4

6 hits Apply

Drain-source On Resistance-Max (2)

52 mΩ 2 55 mΩ 2

Min (Ω) - Max (Ω)

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

6 hits Apply

TO-220AB 3

6 hits Apply

R-PSFM-T3 4

6 hits Apply

e3 3

6 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 5 onsemi 1

6 hits Apply

Number of Elements (1)

1 4

6 hits Apply

Number of Terminals (1)

3 4

6 hits Apply

ENHANCEMENT MODE 4

6 hits Apply

175.0 °C 4

6 hits Apply

PLASTIC/EPOXY 4

6 hits Apply

RECTANGULAR 4

6 hits Apply

FLANGE MOUNT 4

6 hits Apply

End Of Life 1 Obsolete 4 Transferred 1

6 hits Apply

Yes 2

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

6 hits Apply

127 W 3

6 hits Apply

Surface Mount (1)

NO 4

6 hits Apply