Parametric results for: FQP5N20 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

60.0 mJ 8

8 hits Apply

DRAIN 5

8 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 8

8 hits Apply

DS Breakdown Voltage-Min (1)

200 V 8

8 hits Apply

Drain Current-Max (ID) (2)

1 A 3 4.5 A 5

Min (A) - Max (A)

8 hits Apply

Drain-source On Resistance-Max (2)

1.2 Ω 2 1.25 Ω 6

Min (Ω) - Max (Ω)

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

TO-220AB 3

8 hits Apply

R-PDSO-G4 3 R-PSFM-T3 5

8 hits Apply

e3 3

8 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 7 Rochester Electronics LLC 1

8 hits Apply

NOT APPLICABLE 1

8 hits Apply

Number of Elements (1)

1 8

8 hits Apply

Number of Terminals (2)

3 5 4 3

8 hits Apply

ENHANCEMENT MODE 8

8 hits Apply

150.0 °C 7

8 hits Apply

PLASTIC/EPOXY 8

8 hits Apply

RECTANGULAR 8

8 hits Apply

FLANGE MOUNT 5 SMALL OUTLINE 3

8 hits Apply

Active 1 Obsolete 7

8 hits Apply

Yes 1

8 hits Apply

NOT APPLICABLE 1

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

52 W 2

8 hits Apply

Surface Mount (2)

NO 5 YES 3

8 hits Apply