Parametric results for: FQPF50N06 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

495.0 mJ 1 1000.0 mJ 2

Min (mJ) - Max (mJ)

4 hits Apply

ISOLATED 3

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

60 V 3

4 hits Apply

Drain Current-Max (ID) (2)

31 A 1 32.6 A 2

Min (A) - Max (A)

4 hits Apply

Drain-source On Resistance-Max (2)

22 mΩ 1 25 mΩ 2

Min (Ω) - Max (Ω)

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

R-PSFM-T3 3

4 hits Apply

e3 3

4 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 2 onsemi 1 Rochester Electronics LLC 1

4 hits Apply

NOT APPLICABLE 1

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

3 3

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

175.0 °C 2

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

FLANGE MOUNT 3

4 hits Apply

Active 1 Obsolete 3

4 hits Apply

Yes 3

4 hits Apply

NOT APPLICABLE 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

4 hits Apply

47 W 2

4 hits Apply

Surface Mount (1)

NO 3

4 hits Apply