Parametric results for: FQT13N06TF under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 1

2 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

60 V 1

2 hits Apply

Drain Current-Max (ID) (1)

2.8 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

140 mΩ 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

20 pF 1

2 hits Apply

R-PDSO-G4 1

2 hits Apply

e3 1

2 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 1 Rochester Electronics LLC 1

2 hits Apply

1 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

4 1

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 1

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

SMALL OUTLINE 1

2 hits Apply

Active 1 Obsolete 1

2 hits Apply

Yes 1

2 hits Apply

260 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

2.1 W 1

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply