Parametric results for: FQT1N80TF_WS under Small Signal Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

90.0 mJ 2

3 hits Apply

DRAIN 3

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

800 V 3

3 hits Apply

Drain Current-Max (ID) (2)

200 µA 1 200 mA 2

Min (A) - Max (A)

3 hits Apply

Drain-source On Resistance-Max (1)

20 Ω 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

5 pF 3

3 hits Apply

R-PDSO-G4 3

3 hits Apply

e3 3

3 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 1 onsemi 2

3 hits Apply

1 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

4 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

-55.0 °C 2

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Active 2 Transferred 1

3 hits Apply

Yes 2

3 hits Apply

260 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

2.1 W 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply