Parametric results for: FQT2P25 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

120.0 mJ 6

6 hits Apply

DRAIN 6

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

250 V 6

6 hits Apply

Drain Current-Max (ID) (1)

550 mA 6

6 hits Apply

Drain-source On Resistance-Max (1)

4 Ω 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

R-PDSO-G4 6

6 hits Apply

e0 1 e3 2

6 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 5 onsemi 1

6 hits Apply

1 3

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

4 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 3

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

SMALL OUTLINE 6

6 hits Apply

End Of Life 1 Obsolete 4 Transferred 1

6 hits Apply

Yes 2

6 hits Apply

250 2

6 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 6

6 hits Apply

2.5 W 3

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply