Parametric results for: FS100R17N3E4B11BOSA1 under IGBTs

All Filters Case Connection Collector-Emitter Voltage-Max Configuration Gate-Emitter Thr Voltage-Max Gate-Emitter Voltage-Max JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ISOLATED 1

1 hit Apply

Collector-Emitter Voltage-Max (1)

1.7 kV 1

1 hit Apply

Configuration (1)

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR 1

1 hit Apply

Gate-Emitter Thr Voltage-Max (1)

6.4 V 1

1 hit Apply

20 V 1

1 hit Apply

R-XUFM-X35 1

1 hit Apply

Manufacturer (1)

Infineon Technologies AG 1

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Number of Elements (1)

6 1

1 hit Apply

Number of Terminals (1)

35 1

1 hit Apply

150.0 °C 1

1 hit Apply

-40.0 °C 1

1 hit Apply

UNSPECIFIED 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

FLANGE MOUNT 1

1 hit Apply

Active 1

1 hit Apply

NOT SPECIFIED 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

600 W 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply