Parametric results for: FSF9250R4 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

RADIATION HARDENED 2

3 hits Apply

ISOLATED 1

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

200 V 3

3 hits Apply

Drain Current-Max (ID) (1)

15 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

290 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

TO-254AA 3

3 hits Apply

S-MSFM-P3 3

3 hits Apply

e0 3

3 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 1 Harris Semiconductor 1 Intersil Corporation 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

METAL 3

3 hits Apply

SQUARE 3

3 hits Apply

FLANGE MOUNT 3

3 hits Apply

Obsolete 1 Transferred 2

3 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 3

3 hits Apply

125 W 3

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply