Parametric results for: FSJ260R under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

RADIATION HARDENED 5

11 hits Apply

ISOLATED 8

11 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 11

11 hits Apply

DS Breakdown Voltage-Min (1)

200 V 11

11 hits Apply

Drain Current-Max (ID) (1)

44 A 11

11 hits Apply

Drain-source On Resistance-Max (1)

50 mΩ 11

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

TO-254AA 11

11 hits Apply

R-MSFM-P3 5 S-MSFM-P3 6

11 hits Apply

e0 11

11 hits Apply

Manufacturer (4)

Fairchild Semiconductor Corporation 3 Harris Semiconductor 3 International Rectifier 2 Intersil Corporation 3

11 hits Apply

Number of Elements (1)

1 11

11 hits Apply

Number of Terminals (1)

3 11

11 hits Apply

ENHANCEMENT MODE 11

11 hits Apply

150.0 °C 11

11 hits Apply

METAL 11

11 hits Apply

RECTANGULAR 5 SQUARE 6

11 hits Apply

FLANGE MOUNT 11

11 hits Apply

Obsolete 3 Transferred 8

11 hits Apply

No 2

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

11 hits Apply

192 W 9

11 hits Apply

Surface Mount (1)

NO 11

11 hits Apply