Parametric results for: FSL130D3 under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

RADIATION HARDENED 2

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

100 V 3

3 hits Apply

Drain Current-Max (ID) (1)

8 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

230 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

TO-205AF 3

3 hits Apply

O-MBCY-W3 3

3 hits Apply

e0 3

3 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 1 Harris Semiconductor 1 Intersil Corporation 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

METAL 3

3 hits Apply

ROUND 3

3 hits Apply

CYLINDRICAL 3

3 hits Apply

Obsolete 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

10 W 1 25 W 2

Min (W) - Max (W)

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply