Parametric results for: FSL9110R3 under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

RADIATION HARDENED 2

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

100 V 4

4 hits Apply

Drain Current-Max (ID) (1)

2.5 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

1.3 Ω 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-205AF 4

4 hits Apply

O-MBCY-W3 4

4 hits Apply

e0 4

4 hits Apply

Manufacturer (4)

Fairchild Semiconductor Corporation 1 Harris Semiconductor 1 International Rectifier 1 Intersil Corporation 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 4

4 hits Apply

METAL 4

4 hits Apply

ROUND 4

4 hits Apply

CYLINDRICAL 4

4 hits Apply

Obsolete 1 Transferred 3

4 hits Apply

No 1

4 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 4

4 hits Apply

6 W 1 15 W 2

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply