Parametric results for: FSR1110R4 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

100 V 2

2 hits Apply

Drain Current-Max (ID) (1)

1 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

680 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

MO-036AB 2

2 hits Apply

R-CDIP-T14 2

2 hits Apply

e0 2

2 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 1 Intersil Corporation 1

2 hits Apply

Number of Elements (1)

4 2

2 hits Apply

Number of Terminals (1)

14 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 2

2 hits Apply

CERAMIC, METAL-SEALED COFIRED 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

IN-LINE 2

2 hits Apply

Obsolete 1 Transferred 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

500 mW 1 1.25 W 1

Min (W) - Max (W)

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply