Parametric results for: FSS913A0R under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ISOLATED 8

8 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 8

8 hits Apply

DS Breakdown Voltage-Min (1)

100 V 8

8 hits Apply

Drain Current-Max (ID) (1)

10 A 8

8 hits Apply

Drain-source On Resistance-Max (1)

280 mΩ 8

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

TO-257AA 8

8 hits Apply

R-MSFM-P3 5 S-MSFM-P3 3

8 hits Apply

e0 5

8 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 3 International Rectifier 2 Intersil Corporation 3

8 hits Apply

Number of Elements (1)

1 8

8 hits Apply

Number of Terminals (1)

3 8

8 hits Apply

ENHANCEMENT MODE 8

8 hits Apply

150.0 °C 5

8 hits Apply

METAL 8

8 hits Apply

RECTANGULAR 5 SQUARE 3

8 hits Apply

FLANGE MOUNT 8

8 hits Apply

Obsolete 3 Transferred 5

8 hits Apply

No 2

8 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 8

8 hits Apply

22 W 3

8 hits Apply

Surface Mount (1)

NO 8

8 hits Apply